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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › TPH3208PD
TPH3208PD

TPH3208PD - Transphorm

Part Number
TPH3208PD
Manufacturer
Transphorm
Brief Description
GANFET N-CH 650V 20A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPH3208PD PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
15245 pcs
Reference Price
USD 10.8/pcs
Our Price
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TPH3208PD Detailed Description

Part Number TPH3208PD
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130 mOhm @ 13A, 8V
Vgs(th) (Max) @ Id 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 150°C
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Weight -
Country of Origin -

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