TPH3208LSG - Transphorm

Part Number	TPH3208LSG
Part Status	Not For New Designs
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	130 mOhm @ 14A, 8V
Vgs(th) (Max) @ Id	2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 8V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	760pF @ 400V
FET Feature	-
Power Dissipation (Max)	96W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-PQFN (8x8)
Package / Case	3-PowerDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPH3202LD	Transphorm	GAN FET 600V 9A PQFN88	Details
TPH3202LS	Transphorm	GAN FET 600V 9A PQFN88	Details
TPH3202PD	Transphorm	GAN FET 600V 9A TO220	Details
TPH3202PS	Transphorm	GAN FET 600V 9A TO220	Details
TPH3205WSB	Transphorm	GAN FET 650V 36A TO247	Details
TPH3205WSBQA	Transphorm	GAN FET 650V 35A TO247	Details
TPH3206LD	Transphorm	GAN FET 600V 17A PQFN88	Details
TPH3206LDB	Transphorm	MOSFET N-CH GANFET 650V 16A PQFN	Details
TPH3206LDGB	Transphorm	GAN FET 650V 16A PQFN88	Details
TPH3206LS	Transphorm	GAN FET 600V 17A PQFN88	Details