TPW1R005PL,L1Q - Toshiba Semiconductor and Storage

Part Number	TPW1R005PL,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	45V
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9600pF @ 22.5V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs	-
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-DSOP Advance
Package / Case	8-PowerWDFN
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TPW1R005PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details
	TPW1R306PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details