TPC8212-H(TE12LQ,M

TPC8212-H(TE12LQ,M - Toshiba Semiconductor and Storage

Part Number
TPC8212-H(TE12LQ,M
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET 2N-CH 30V 6A SOP8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPC8212-H(TE12LQ,M PDF online browsing
Datasheet PDF Download
TPC8212-H(TE12LQ,M.pdf
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
3714 pcs
Reference Price
USD 0/pcs
Our Price
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TPC8212-H(TE12LQ,M Detailed Description

Part Number TPC8212-H(TE12LQ,M
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 21 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 10V
Power - Max 450mW
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP (5.5x6.0)
Weight -
Country of Origin -

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