TK65S04N1L,LQ - Toshiba Semiconductor and Storage

Part Number	TK65S04N1L,LQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2550pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Rds On (Max) @ Id, Vgs	4.3 mOhm @ 32.5A, 10V
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK+
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TK65S04K3L(T6L1,NQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 65A DPAK-3	Details
	TK65S04N1L,LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 65A DPAK	Details