SSM6P35FE(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	SSM6P35FE(TE85L,F)
Part Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	100mA
Rds On (Max) @ Id, Vgs	8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	12.2pF @ 3V
Power - Max	150mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6 (1.6x1.6)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SSM6P35AFE,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH X 2 VDS	Details
SSM6P35AFU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH X 2 VDS	Details
SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.1A ES6	Details
SSM6P35FE,LM	Toshiba Semiconductor and Storage	MOSFET 2NCH 20V 100MA ES6	Details
SSM6P35FU	TOS	SSM6P35FU TOS US6 New Original Stocks	Details
SSM6P36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.33A ES6	Details