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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased › RN1116MFV,L3F
RN1116MFV,L3F

RN1116MFV,L3F - Toshiba Semiconductor and Storage

Part Number
RN1116MFV,L3F
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RN1116MFV,L3F PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
5681517 pcs
Reference Price
USD 0.02898/pcs
Our Price
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RN1116MFV,L3F Detailed Description

Part Number RN1116MFV,L3F
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Weight -
Country of Origin -

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