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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased › RN1111,LF(CT
RN1111,LF(CT

RN1111,LF(CT - Toshiba Semiconductor and Storage

Part Number
RN1111,LF(CT
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PREBIAS NPN 0.1W SSM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RN1111,LF(CT PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
3560 pcs
Reference Price
USD 0/pcs
Our Price
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RN1111,LF(CT Detailed Description

Part Number RN1111,LF(CT
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Supplier Device Package SSM
Weight -
Country of Origin -

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