HN4K03JUTE85LF - Toshiba Semiconductor and Storage

Part Number	HN4K03JUTE85LF
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	8.5pF @ 3V
Vgs (Max)	10V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Rds On (Max) @ Id, Vgs	12 Ohm @ 10mA, 2.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	USV
Package / Case	5-TSSOP, SC-70-5, SOT-353
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	HN4K03JU	TOSHIBA	HN4K03JU TOSHIBA SOT-35.. New Original Stocks	Details
	HN4K03JUTE85LF	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 0.1A USV	Details