GT50J121(Q) - Toshiba Semiconductor and Storage

Part Number	GT50J121(Q)
Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	50A
Current - Collector Pulsed (Icm)	100A
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 50A
Power - Max	240W
Switching Energy	1.3mJ (on), 1.34mJ (off)
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	90ns/300ns
Test Condition	300V, 50A, 13 Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3PL
Supplier Device Package	TO-3P(LH)
Weight	-
Country of Origin	-

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GT50J121(Q)	Toshiba Semiconductor and Storage	IGBT 600V 50A 240W TO3P LH	Details