BAS516,L3F - Toshiba Semiconductor and Storage

Part Number	BAS516,L3F
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	250mA
Voltage - Forward (Vf) (Max) @ If	1.25V @ 150mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	3ns
Current - Reverse Leakage @ Vr	200nA @ 80V
Capacitance @ Vr, F	0.35pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SC-79, SOD-523
Supplier Device Package	ESC
Operating Temperature - Junction	150°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BAS516	NXP	BAS516 NXP SOD-52.. New Original Stocks	Details
BAS516,115	Nexperia USA Inc.	DIODE GEN PURP 100V 250MA SOD523	Details
BAS516,135	Nexperia USA Inc.	DIODE GEN PURP 100V 250MA SOD523	Details
BAS516,315	Nexperia USA Inc.	DIODE GEN PURP 100V 250MA SOD523	Details
BAS516,H3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA ESC	Details
BAS516,L3F	Toshiba Semiconductor and Storage	DIODE GEN PURP 100V 250MA ESC	Details
BAS516-TP	Micro Commercial Co	DIODE GEN PURP 75V 250MA SOD523	Details
BAS516/B	NXP	BAS516/B NXP SOT-52.. New Original Stocks	Details
BAS516/DG	NXP	BAS516/DG NXP SOD-52.. New Original Stocks	Details
BAS52-02V	INFINEON	BAS52-02V INFINEON SOD523 New Original Stocks	Details