• English
      Language Translation
    • English
    • Deutschl
    • Italia
    • France
    • España
    • 대한민국
    • 日本语
    • русский
Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays › TSM200N03DPQ33 RGG
TSM200N03DPQ33 RGG

TSM200N03DPQ33 RGG - Taiwan Semiconductor Corporation

Part Number
TSM200N03DPQ33 RGG
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
MOSFET 2 N-CH 30V 20A 8PDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TSM200N03DPQ33 RGG PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
944690 pcs
Reference Price
USD 0.17429/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for TSM200N03DPQ33 RGG

TSM200N03DPQ33 RGG Detailed Description

Part Number TSM200N03DPQ33 RGG
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Rds On (Max) @ Id, Vgs 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
Power - Max 20W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PDFN (3x3)
Weight -
Country of Origin -

RELATED PRODUCTS FOR TSM200N03DPQ33 RGG

Image Part Number Manufacturers Description View
TSM200N03DPQ33 RGG TSM200N03DPQ33 RGG Taiwan Semiconductor Corporation MOSFET 2 N-CH 30V 20A 8PDFN Details