STH110N7F6-2 Detailed Description
Part Number |
STH110N7F6-2 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
68V |
Current - Continuous Drain (Id) @ 25°C |
80A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
5850pF @ 25V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
176W (Tc) |
Rds On (Max) @ Id, Vgs |
6.3 mOhm @ 55A, 10V |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
H2Pak-2 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Weight |
- |
Country of Origin |
- |
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