1N5620C.TR - Semtech Corporation

Part Number	1N5620C.TR
Part Status	Active
Diode Type	Avalanche
Voltage - DC Reverse (Vr) (Max)	800V
Current - Average Rectified (Io)	2A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	2µs
Current - Reverse Leakage @ Vr	500nA @ 800V
Capacitance @ Vr, F	23pF @ 5V, 1MHz
Mounting Type	Through Hole
Package / Case	Axial
Supplier Device Package	Axial
Operating Temperature - Junction	-65°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
1N5610	Microsemi Corporation	TVS DIODE 30.5VWM 47.6VC G-PKG	Details
1N5611	Microsemi Corporation	TVS DIODE	Details
1N5613	Microsemi Corporation	TVS DIODE C-BODY	Details
1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Details
1N5614GP	VISHAY	1N5614GP VISHAY DO-15 New Original Stocks	Details
1N5614GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AC	Details
1N5614GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AC	Details
1N5614GPHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AC	Details
1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Details
1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Details