| Part Number | R8010ANX |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Rds On (Max) @ Id, Vgs | 560 mOhm @ 5A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
| Package / Case | TO-220-2 Full Pack |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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R8002ANJFRGTL | Rohm Semiconductor | R8002ANJ FRG IS A POWER MOSFET W | Details |
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R8002ANX | Rohm Semiconductor | MOSFET N-CH 800V 2A TO-220FM | Details |
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R8005ANJFRGTL | Rohm Semiconductor | R8005ANJ FRG IS A POWER MOSFET W | Details |
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R8005ANX | Rohm Semiconductor | MOSFET N-CH 800V 5A TO220 | Details |
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R8008ANJFRGTL | Rohm Semiconductor | R8008ANJ FRG IS A POWER MOSFET W | Details |
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R8008ANX | Rohm Semiconductor | MOSFET N-CH 800V 8A TO-220FM | Details |
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R800CHX | EXSHINE | DISTRIBUTED GATE THYRISTORS | Details |
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R8010ANX | Rohm Semiconductor | MOSFET N-CH 800V 10A TO220 | Details |
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R80186 | INTEL | R80186 INTEL PGA New Original Stocks | Details |
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R80186-10 | INTEL | R80186-10 INTEL BGA New Original Stocks | Details |
