R8010ANX - Rohm Semiconductor

Part Number	R8010ANX
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1750pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Rds On (Max) @ Id, Vgs	560 mOhm @ 5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FM
Package / Case	TO-220-2 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
R8002ANJFRGTL	Rohm Semiconductor	R8002ANJ FRG IS A POWER MOSFET W	Details
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R8005ANJFRGTL	Rohm Semiconductor	R8005ANJ FRG IS A POWER MOSFET W	Details
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R8010ANX	Rohm Semiconductor	MOSFET N-CH 800V 10A TO220	Details
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