BSM180C12P2E202 Detailed Description
| Part Number |
BSM180C12P2E202 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
204A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
- |
| Rds On (Max) @ Id, Vgs |
- |
| Vgs(th) (Max) @ Id |
4V @ 35.2mA |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Vgs (Max) |
+22V, -6V |
| Input Capacitance (Ciss) (Max) @ Vds |
20000pF @ 10V |
| FET Feature |
- |
| Power Dissipation (Max) |
1360W (Tc) |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Supplier Device Package |
Module |
| Package / Case |
Module |
| Weight |
- |
| Country of Origin |
- |
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