APT70GR65B2SCD30

APT70GR65B2SCD30 - Microsemi Corporation

Part Number
APT70GR65B2SCD30
Manufacturer
Microsemi Corporation
Brief Description
INSULATED GATE BIPOLAR TRANSISTO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
APT70GR65B2SCD30 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
1774 pcs
Reference Price
USD 14.9197/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for APT70GR65B2SCD30

APT70GR65B2SCD30 Detailed Description

Part Number APT70GR65B2SCD30
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 134A
Current - Collector Pulsed (Icm) 260A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A
Power - Max 595W
Switching Energy -
Input Type -
Gate Charge 305nC
Td (on/off) @ 25°C 19ns/170ns
Test Condition 433V, 70A, 4.3 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package T-MAX™ [B2]
Weight -
Country of Origin -

RELATED PRODUCTS FOR APT70GR65B2SCD30