| Part Number | APT45GR65B2DU30 |
|---|---|
| Part Status | Active |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 118A |
| Current - Collector Pulsed (Icm) | 224A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 45A |
| Power - Max | 543W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 203nC |
| Td (on/off) @ 25°C | 15ns/100ns |
| Test Condition | 433V, 45A, 4.3 Ohm, 15V |
| Reverse Recovery Time (trr) | 80ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | T-MAX™ [B2] |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
APT45GP120B2DQ2G | Microsemi Corporation | IGBT 1200V 113A 625W TMAX | Details |
 |
APT45GP120BG | Microsemi Corporation | IGBT 1200V 100A 625W TO247 | Details |
 |
APT45GP120J | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Details |
|
APT45GP120JDQ2 | Microsemi Corporation | IGBT 1200V 75A 329W SOT227 | Details |
|
APT45GR65B | Microsemi Corporation | IGBT 650V 92A 357W TO-247 | Details |
|
APT45GR65B2DU30 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT45GR65BSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
|
APT45GR65SSCD10 | Microsemi Corporation | INSULATED GATE BIPOLAR TRANSISTO | Details |
 |
APT45M100J | Microsemi Corporation | MOSFET N-CH 1000V 45A SOT-227 | Details |
