IXFQ12N80P

IXFQ12N80P - IXYS

Part Number
IXFQ12N80P
Manufacturer
IXYS
Brief Description
MOSFET N-CH 800V 12A TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXFQ12N80P PDF online browsing
Datasheet PDF Download
IXFQ12N80P.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
6634 pcs
Reference Price
USD 3.861/pcs
Our Price
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IXFQ12N80P Detailed Description

Part Number IXFQ12N80P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 360W (Tc)
Rds On (Max) @ Id, Vgs 850 mOhm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Weight -
Country of Origin -

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