IXFQ10N80P Detailed Description
| Part Number |
IXFQ10N80P |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
800V |
| Current - Continuous Drain (Id) @ 25°C |
10A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) |
10V |
| Vgs(th) (Max) @ Id |
5.5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs |
40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2050pF @ 25V |
| Vgs (Max) |
±30V |
| FET Feature |
- |
| Power Dissipation (Max) |
300W (Tc) |
| Rds On (Max) @ Id, Vgs |
1.1 Ohm @ 5A, 10V |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-3P |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
- |
| Country of Origin |
- |
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