IXFQ20N50P3 - IXYS

Part Number	IXFQ20N50P3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	380W (Tc)
Rds On (Max) @ Id, Vgs	300 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P
Package / Case	TO-3P-3, SC-65-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFQ10N80P	IXYS	MOSFET N-CH 800V 10A TO-3P	Details
IXFQ120N25X3	IXYS	MOSFET N-CHANNEL 250V 120A TO3P	Details
IXFQ12N80P	IXYS	MOSFET N-CH 800V 12A TO-3P	Details
IXFQ140N20X3	IXYS	200V/140A ULTRA JUNCTION X3-CLAS	Details
IXFQ14N80P	IXYS	MOSFET N-CH 800V 14A TO-3P	Details
IXFQ20N50P3	IXYS	MOSFET N-CH 500V 20A TO-3P	Details
IXFQ21N50Q	IXYS	MOSFET N-CH 500V 21A TO-3P	Details
IXFQ22N60P3	IXYS	MOSFET N-CH 600V 22A TO3P	Details
IXFQ23N60Q	IXYS	MOSFET N-CH 600V 23A TO-268(D3)	Details
IXFQ24N50P2	IXYS	500V POLAR2 HIPERFETS	Details