IXFN50N120SK

IXFN50N120SK - IXYS

Part Number
IXFN50N120SK
Manufacturer
IXYS
Brief Description
MOSFET N-CH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXFN50N120SK PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2757 pcs
Reference Price
USD 59.664/pcs
Our Price
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IXFN50N120SK Detailed Description

Part Number IXFN50N120SK
Part Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 52 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 115nC @ 20V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1895pF @ 1000V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC
Weight -
Country of Origin -

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