IXFN50N120SK Detailed Description
| Part Number |
IXFN50N120SK |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
20V |
| Rds On (Max) @ Id, Vgs |
52 mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id |
2.8V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs |
115nC @ 20V |
| Vgs (Max) |
+20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds |
1895pF @ 1000V |
| FET Feature |
- |
| Power Dissipation (Max) |
- |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Supplier Device Package |
SOT-227B |
| Package / Case |
SOT-227-4, miniBLOC |
| Weight |
- |
| Country of Origin |
- |
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