IXFB80N50Q2 - IXYS

Part Number	IXFB80N50Q2
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	15000pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	960W (Tc)
Rds On (Max) @ Id, Vgs	60 mOhm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Weight	-
Country of Origin	-

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