IXFB100N50Q3 - IXYS

Part Number	IXFB100N50Q3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	13800pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	1560W (Tc)
Rds On (Max) @ Id, Vgs	49 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXFB100N50P	IXYS	MOSFET N-CH 500V 100A PLUS264	Details
IXFB100N50Q3	IXYS	MOSFET N-CH 500V 100A PLUS264	Details
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IXFB120N50P2	IXYS	MOSFET N-CH 500V 120A PLUS264	Details
IXFB132N50P3	IXYS	MOSFET N-CH 500V 132A PLUS264	Details
IXFB150N65X2	IXYS	MOSFET N-CH 650V 150A PLUS264	Details
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IXFB210N20P	IXYS	MOSFET N-CH 200V 210A PLUS264	Details
IXFB210N30P3	IXYS	MOSFET N-CH 300V 210A PLUS264	Details
IXFB300N10P	IXYS	MOSFET N-CH 100V 300A PLUS264	Details