IXFB100N50Q3 Detailed Description
Part Number |
IXFB100N50Q3 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
500V |
Current - Continuous Drain (Id) @ 25°C |
100A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
10V |
Vgs(th) (Max) @ Id |
6.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs |
255nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
13800pF @ 25V |
Vgs (Max) |
±30V |
FET Feature |
- |
Power Dissipation (Max) |
1560W (Tc) |
Rds On (Max) @ Id, Vgs |
49 mOhm @ 50A, 10V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PLUS264™ |
Package / Case |
TO-264-3, TO-264AA |
Weight |
- |
Country of Origin |
- |
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