IXFB210N20P - IXYS

Part Number	IXFB210N20P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	210A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs	255nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	18600pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1500W (Tc)
Rds On (Max) @ Id, Vgs	10.5 mOhm @ 105A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS264™
Package / Case	TO-264-3, TO-264AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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