| Part Number | IRF5305SPBF |
|---|---|
| Part Status | Not For New Designs |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 16A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IRF500 | EXSHINE | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | Details |
|
IRF500C10RJ | EXSHINE | 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | Details |
 |
IRF510 | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-220AB | Details |
 |
IRF510L | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-262 | Details |
|
IRF510PBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A TO-220AB | Details |
|
IRF510S | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | Details |
|
IRF510SPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | Details |
|
IRF510STRL | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | Details |
|
IRF510STRLPBF | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | Details |
|
IRF510STRR | Vishay Siliconix | MOSFET N-CH 100V 5.6A D2PAK | Details |
