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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › IPW65R280E6FKSA1
IPW65R280E6FKSA1

IPW65R280E6FKSA1 - Infineon Technologies

Part Number
IPW65R280E6FKSA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 650V 13.8A TO247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPW65R280E6FKSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
42815 pcs
Reference Price
USD 0/pcs
Our Price
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IPW65R280E6FKSA1 Detailed Description

Part Number IPW65R280E6FKSA1
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Weight -
Country of Origin -

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