| Part Number | IPW65R019C7FKSA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.92mA |
| Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900pF @ 400V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 446W (Tc) |
| Rds On (Max) @ Id, Vgs | 19 mOhm @ 58.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPW65R019C7FKSA1 | Infineon Technologies | MOSFET N-CH 650V 75A TO247-3 | Details |
|
IPW65R037C6FKSA1 | Infineon Technologies | MOSFET N-CH 650V 83.2A TO247-3 | Details |
|
IPW65R041CFD | Infineon Technologies | MOSFET N CH 650V 68.5A PG-TO247 | Details |
|
IPW65R041CFDFKSA1 | Infineon Technologies | MOSFET N CH 650V 68.5A PG-TO247 | Details |
 |
IPW65R041CFDFKSA2 | Infineon Technologies | HIGH POWERLEGACY | Details |
|
IPW65R045C7300XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-247-3 | Details |
|
IPW65R045C7FKSA1 | Infineon Technologies | MOSFET N-CH 650V 46A TO-247-3 | Details |
|
IPW65R048CFDAFKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-247-3 | Details |
|
IPW65R065C7XKSA1 | Infineon Technologies | MOSFET N-CH 650V TO-247-3 | Details |
|
IPW65R070C6 | Infineon Technologies | MOSFET N-CH 650V 53.5A TO247 | Details |
