IPD60R1K0CEATMA1 - Infineon Technologies

Part Number	IPD60R1K0CEATMA1
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	4.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	37W (Tc)
Rds On (Max) @ Id, Vgs	1 Ohm @ 1.5A, 10V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

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