| Part Number | IPD60R1K4C6 |
|---|---|
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 28.4W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
IPD600N25N3GATMA1 | Infineon Technologies | MOSFET N-CH 250V 25A | Details |
|
IPD600N25N3GBTMA1 | Infineon Technologies | MOSFET N-CH 250V 25A TO252-3 | Details |
 |
IPD60N10S412ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
 |
IPD60N10S4L12ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
|
IPD60R145CFD7ATMA1 | Infineon Technologies | HIGH POWERNEW | Details |
|
IPD60R170CFD7ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
|
IPD60R180C7ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
|
IPD60R180P7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 18A TO252-3 | Details |
|
IPD60R180P7SAUMA1 | Infineon Technologies | CONSUMER | Details |
|
IPD60R180P7SE8228AUMA1 | Infineon Technologies | CONSUMER | Details |
