| Part Number | IPD06N03LA G |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7 mOhm @ 30A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IPD033N06NATMA1 | Infineon Technologies | MOSFET N-CH TO-252-3 | Details |
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IPD034N06N3 G | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | Details |
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IPD034N06N3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 100A TO252-3 | Details |
