IPD034N06N3GATMA1

IPD034N06N3GATMA1 - Infineon Technologies

Part Number
IPD034N06N3GATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 60V 100A TO252-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPD034N06N3GATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
214300 pcs
Reference Price
USD 0.76831/pcs
Our Price
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IPD034N06N3GATMA1 Detailed Description

Part Number IPD034N06N3GATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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