FZ800R12KS4B2NOSA1

FZ800R12KS4B2NOSA1 - Infineon Technologies

Part Number
FZ800R12KS4B2NOSA1
Manufacturer
Infineon Technologies
Brief Description
MODULE IGBT A-IHM130-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FZ800R12KS4B2NOSA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - IGBTs - Modules
Delivery Time
1 Day
Date Code
New
Stock Quantity
150 pcs
Reference Price
USD 1092.975/pcs
Our Price
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FZ800R12KS4B2NOSA1 Detailed Description

Part Number FZ800R12KS4B2NOSA1
Part Status Not For New Designs
IGBT Type -
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1200A
Power - Max 7600W
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 800A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 52nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 125°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Weight -
Country of Origin -

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