BSZ340N08NS3GATMA1 - Infineon Technologies

Part Number	BSZ340N08NS3GATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	34 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs	9.1nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 40V
FET Feature	-
Power Dissipation (Max)	2.1W (Ta), 32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TSDSON-8
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	BSZ340N08NS3 G	Infineon Technologies	MOSFET N-CH 80V 23A TSDSON-8	Details
	BSZ340N08NS3GATMA1	Infineon Technologies	MOSFET N-CH 80V 23A TSDSON-8	Details