BSZ067N06LS3GATMA1

BSZ067N06LS3GATMA1 - Infineon Technologies

Part Number
BSZ067N06LS3GATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 60V 20A TSDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSZ067N06LS3GATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
319815 pcs
Reference Price
USD 0.51483/pcs
Our Price
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BSZ067N06LS3GATMA1 Detailed Description

Part Number BSZ067N06LS3GATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5100pF @ 30V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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