BSC010NE2LSI - Infineon Technologies

Part Number	BSC010NE2LSI
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	38A (Ta), 100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4200pF @ 12V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs	1.05 mOhm @ 30A, 10V
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8
Package / Case	8-PowerTDFN
Weight	-
Country of Origin	-

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