| Part Number | GB02SHT01-46 |
|---|---|
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 4A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.6V @ 1A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Capacitance @ Vr, F | 76pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Supplier Device Package | TO-46 |
| Operating Temperature - Junction | -55°C ~ 225°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
GB02505EPL | EXSHINE | A SERIES OF SPECTRAL - RESPONSE SILICON PHOTOCELLS DESIGNED FOR UNIQUE PRODUCT APPLICATIONS | Details |
|
GB02SHT01-46 | GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | Details |
 |
GB02SHT03-46 | GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | Details |
 |
GB02SHT06-46 | GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | Details |
 |
GB02SLT06-214 | GeneSiC Semiconductor | SIC SCHOTTKY DIODE 650V 2A | Details |
 |
GB02SLT12-214 | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A DO214AA | Details |
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GB02SLT12-220 | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | Details |
 |
GB02SLT12-252 | GeneSiC Semiconductor | DIODE SIC SCHKY 1.2KV 2A TO252 | Details |
