| Part Number | GA50JT12-247 |
|---|---|
| Part Status | Active |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 1200V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7209pF @ 800V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 583W (Tc) |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 50A |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AB |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
GA50JT06-258 | GeneSiC Semiconductor | TRANS SJT 600V 100A | Details |
|
GA50JT12-247 | GeneSiC Semiconductor | TRANS SJT 1.2KV 50A | Details |
 |
GA50JT12-263 | GeneSiC Semiconductor | TRANSISTOR 1200V 100A TO263-7 | Details |
|
GA50JT17-247 | GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | Details |
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GA50K6A1A | TE Connectivity Measurement Specialties | NTC THERMISTOR 50K OHM 0.1C BEAD | Details |
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GA50SICP12-227 | GeneSiC Semiconductor | SIC CO-PACK SJT/RECT 50A 1.2KV | Details |
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GA50TS120K | EXSHINE | Short Circuit Rated Ultra-FastTM Speed IGBT | Details |
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GA50TS120L | IR | GA50TS120L IR SMD or Through Hole New Original Stocks | Details |
|
GA50TS120U | IR | GA50TS120U IR SMD or Through Hole New Original Stocks | Details |
