GA50JT12-263 - GeneSiC Semiconductor

Part Number	GA50JT12-263
Part Status	Active
FET Type	-
Technology	-
Drain to Source Voltage (Vdss)	-
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	-
Operating Temperature	-
Mounting Type	-
Supplier Device Package	-
Package / Case	-
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GA50JT06-258	GeneSiC Semiconductor	TRANS SJT 600V 100A	Details
GA50JT12-247	GeneSiC Semiconductor	TRANS SJT 1.2KV 50A	Details
GA50JT12-263	GeneSiC Semiconductor	TRANSISTOR 1200V 100A TO263-7	Details
GA50JT17-247	GeneSiC Semiconductor	TRANS SJT 1.7KV 100A	Details
GA50K6A1A	TE Connectivity Measurement Specialties	NTC THERMISTOR 50K OHM 0.1C BEAD	Details
GA50SICP12-227	GeneSiC Semiconductor	SIC CO-PACK SJT/RECT 50A 1.2KV	Details
GA50TS120K	EXSHINE	Short Circuit Rated Ultra-FastTM Speed IGBT	Details
GA50TS120L	IR	GA50TS120L IR SMD or Through Hole New Original Stocks	Details
GA50TS120U	IR	GA50TS120U IR SMD or Through Hole New Original Stocks	Details