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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Single › GA06JT12-247
GA06JT12-247

GA06JT12-247 - GeneSiC Semiconductor

Part Number
GA06JT12-247
Manufacturer
GeneSiC Semiconductor
Brief Description
TRANS SJT 1200V 6A TO-247AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GA06JT12-247 PDF online browsing
Datasheet PDF Download
GA06JT12-247.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2608 pcs
Reference Price
USD 10.3505/pcs
Our Price
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GA06JT12-247 Detailed Description

Part Number GA06JT12-247
Part Status Active
FET Type -
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) (90°C)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) -
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 220 mOhm @ 6A
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3
Weight -
Country of Origin -

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