DMP1011UCB9-7 - Diodes Incorporated

Part Number	DMP1011UCB9-7
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1060pF @ 4V
Vgs (Max)	-6V
FET Feature	-
Power Dissipation (Max)	890mW (Ta)
Rds On (Max) @ Id, Vgs	10 mOhm @ 2A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-WLB1515-9
Package / Case	9-UFBGA, WLBGA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMP1005UFDF-13	Diodes Incorporated	MOSFET P-CH 12V 26A UDFN2020-6	Details
DMP1005UFDF-7	Diodes Incorporated	MOSFET P-CH 12V 26A UDFN2020-6	Details
DMP1009UFDF-13	Diodes Incorporated	MOSFET P-CH 12V 15A UDFN2020-6	Details
DMP1009UFDF-7	Diodes Incorporated	MOSFET P-CH 12V 15A UDFN2020-6	Details
DMP1011LFV-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333	Details
DMP1011LFV-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333	Details
DMP1011UCB9-7	Diodes Incorporated	MOSFET P-CH 8V 10A U-WLB1515-9	Details
DMP1012UCB9-7	Diodes Incorporated	MOSFET P-CH 8V 10A	Details
DMP1012UFDF-13	Diodes Incorporated	MOSFET P-CH 12V U-DFN2020-6	Details
DMP1012UFDF-7	Diodes Incorporated	MOSFET BVDSS 8V 24V U-DFN2020-6	Details