DMN10H220LVT-7

DMN10H220LVT-7 - Diodes Incorporated

Part Number
DMN10H220LVT-7
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 100V 1.87A TSOT26
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMN10H220LVT-7 PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
60000 pcs
Reference Price
USD 0.2139/pcs
Our Price
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DMN10H220LVT-7 Detailed Description

Part Number DMN10H220LVT-7
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.87A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 401pF @ 25V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 1.67W (Ta)
Rds On (Max) @ Id, Vgs 220 mOhm @ 1.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSOT-26
Package / Case SOT-23-6 Thin, TSOT-23-6
Weight -
Country of Origin -

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