DMN1004UFV-13 - Diodes Incorporated

Part Number	DMN1004UFV-13
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	70A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	2.5V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	47nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	2385pF @ 6V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.9W (Ta)
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 15A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerDI3333-8
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN100	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	Details
DMN100-7	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	Details
DMN100-7-F	Diodes Incorporated	MOSFET N-CH 30V 1.1A SC59-3	Details
DMN1002UCA6-7	Diodes Incorporated	MOSFETN-CHAN 12V X4-DSN3118-6	Details
DMN1003UCA6-7	Diodes Incorporated	MOSFET 2 N-CHANNEL X3-DSN3518-6	Details
DMN1004UFDF-13	Diodes Incorporated	MOSFET N-CH 12V 15A UDFN2020-6	Details
DMN1004UFDF-7	Diodes Incorporated	MOSFET N-CH 12V 15A UDFN2020-6	Details
DMN1004UFV-13	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333	Details
DMN1004UFV-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V POWERDI3333	Details
DMN1006UCA6-7	Diodes Incorporated	MOSFET 2 N-CHANNEL X3-DSN2718-6	Details