DMG4800LK3-13

DMG4800LK3-13 - Diodes Incorporated

Part Number
DMG4800LK3-13
Manufacturer
Diodes Incorporated
Brief Description
MOSFET N-CH 30V 10A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
DMG4800LK3-13 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
50000 pcs
Reference Price
USD 0.2228/pcs
Our Price
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DMG4800LK3-13 Detailed Description

Part Number DMG4800LK3-13
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 798pF @ 10V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 1.71W (Ta)
Rds On (Max) @ Id, Vgs 17 mOhm @ 9A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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