DMG4800LK3-13 - Diodes Incorporated

Part Number	DMG4800LK3-13
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	798pF @ 10V
Vgs (Max)	±25V
FET Feature	-
Power Dissipation (Max)	1.71W (Ta)
Rds On (Max) @ Id, Vgs	17 mOhm @ 9A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMG4800LFG-7	Diodes Incorporated	MOSFET N-CH 30V 7.44A 8DFN	Details
DMG4800LK3-13	Diodes Incorporated	MOSFET N-CH 30V 10A TO252	Details
DMG4800LSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 7.5A 8SO	Details
DMG4812SS	DIODES	DMG4812SS DIODES SOP-8 New Original Stocks	Details
DMG4812SSS-13	Diodes Incorporated	MOSFET N-CH 30V 8A 8-SO	Details
DMG4822SSD-13	Diodes Incorporated	MOSFET 2N-CH 30V 10A 8SO	Details
DMG4822SSDQ-13	Diodes Incorporated	MOSFETDUAL N-CHAN 30VSO-8	Details