CMF20120D Detailed Description
Part Number |
CMF20120D |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1200V |
Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
20V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
90.8nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
1915pF @ 800V |
Vgs (Max) |
+25V, -5V |
FET Feature |
- |
Power Dissipation (Max) |
215W (Tc) |
Rds On (Max) @ Id, Vgs |
110 mOhm @ 20A, 20V |
Operating Temperature |
-55°C ~ 135°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-247-3 |
Package / Case |
TO-247-3 |
Weight |
- |
Country of Origin |
- |
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