C2M1000170J - Cree/Wolfspeed

Part Number	C2M1000170J
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs(th) (Max) @ Id	3.1V @ 500µA (Typ)
Gate Charge (Qg) (Max) @ Vgs	13nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 1000V
Vgs (Max)	+25V, -10V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2A, 20V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package / Case	TO-263-7 (Straight Leads)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
C2M1000170D	Cree/Wolfspeed	MOSFET N-CH 1700V 4.9A TO247	Details
C2M1000170J	Cree/Wolfspeed	MOSFET N-CH 1700V 5.3A TO247	Details
C2M1000170J-TR	Cree/Wolfspeed	MOSFET N-CH 1700V 5.3A TO247	Details