C2M0280120D - Cree/Wolfspeed

Part Number	C2M0280120D
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs(th) (Max) @ Id	2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	20.4nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	259pF @ 1000V
Vgs (Max)	+25V, -10V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Rds On (Max) @ Id, Vgs	370 mOhm @ 6A, 20V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
C2M0025120D	Cree/Wolfspeed	MOSFET N-CH 1200V 90A TO-247	Details
C2M0040120D	Cree/Wolfspeed	MOSFET N-CH 1200V 60A TO-247	Details
C2M0045170D	Cree/Wolfspeed	MOSFET NCH 1.7KV 72A TO247	Details
C2M0045170P	Cree/Wolfspeed	ZFET SIC DMOSFET 1700V VDS RDS	Details
C2M0080120D	Cree/Wolfspeed	MOSFET N-CH 1200V 31.6A TO247	Details
C2M0080170P	Cree/Wolfspeed	ZFET SIC DMOSFET 1700V VDS RDS	Details
C2M0160120D	Cree/Wolfspeed	MOSFET N-CH 1200V 19A TO-247	Details
C2M0280120D	Cree/Wolfspeed	MOSFET N-CH 1200V 10A TO-247-3	Details