CWDM3011P TR13 - Central Semiconductor Corp

Part Number	CWDM3011P TR13
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	11A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 8V
Vgs (Max)	20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	20 mOhm @ 11A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CWDM3011N TR13	Central Semiconductor Corp	MOSFET N-CH 30V 11A 8SOIC	Details
CWDM3011P TR13	Central Semiconductor Corp	MOSFET P-CH 30V 11A 8SOIC	Details
CWDM305N TR13	Central Semiconductor Corp	MOSFET N-CH 30V 5.8A 8SOIC	Details
CWDM305ND TR13	Central Semiconductor Corp	MOSFET 2N-CH 30V 5.8A 8SOIC	Details
CWDM305P TR13	Central Semiconductor Corp	MOSFET P-CH 16V 5.3A 8SOIC	Details
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