BYV30W-600PQ - WeEn Semiconductors

Part Number	BYV30W-600PQ
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	30A
Voltage - Forward (Vf) (Max) @ If	1.55V @ 30A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	75ns
Current - Reverse Leakage @ Vr	10µA @ 600V
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Package / Case	TO-247-2
Supplier Device Package	TO-247-2
Operating Temperature - Junction	175°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
BYV30-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220AC	Details
BYV30B-600PJ	WeEn Semiconductors	DIODE GEN PURP 600V 30A D2PAK	Details
BYV30JT-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO-3P	Details
BYV30W-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO247-2	Details
BYV30X-600PQ	WeEn Semiconductors	DIODE GEN PURP 600V 30A TO220F	Details
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BYV32-100-E3/45	Vishay Semiconductor Diodes Division	DIODE ARRAY GP 100V 18A TO220AB	Details
BYV32-100-XM	SEME-LAB	HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS	Details
BYV32-100-XTM	SEME-LAB	HERMETICALLY SEALED DUAL FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS	Details