| Part Number | VS-GT400TH60N |
|---|---|
| Part Status | Active |
| IGBT Type | Trench |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 530A |
| Power - Max | 1600W |
| Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 400A |
| Current - Collector Cutoff (Max) | 5mA |
| Input Capacitance (Cies) @ Vce | 30.8nF @ 30V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Double INT-A-PAK (3 + 8) |
| Supplier Device Package | Double INT-A-PAK |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
VS-GT100DA120U | Vishay Semiconductor Diodes Division | IGBT 1200V 258A 893W SOT-227 | Details |
 |
VS-GT100DA120UF | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - SOT-227 IG | Details |
|
VS-GT100DA60U | Vishay Semiconductor Diodes Division | IGBT 600V 184A 577W SOT-227 | Details |
|
VS-GT100LA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 134A 463W SOT-227 | Details |
|
VS-GT100NA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 134A 463W SOT-227 | Details |
|
VS-GT100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 180A 652W INT-A-PAK | Details |
|
VS-GT100TP60N | Vishay Semiconductor Diodes Division | IGBT 600V 160A 417W INT-A-PAK | Details |
|
VS-GT105LA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 105A LS CHOP SOT-227 | Details |
|
VS-GT105NA120UX | Vishay Semiconductor Diodes Division | IGBT 1200V 105A HS CHOP SOT-227 | Details |
|
VS-GT120DA65U | Vishay Semiconductor Diodes Division | OUTPUT SW MODULES - SOT-227 IG | Details |
